By Johan Huijsing, Michiel Steyaert, Arthur H.M. van Roermund
This 10th quantity of "Analog Circuit layout" concentrates on three subject matters: Scalable Analog Circuits, High-Speed D/A Converters, and RF strength Amplifiers. every one subject is roofed by means of 6 papers, written via foreign famous specialists on that subject. those papers have an instructional nature geared toward bettering the layout of analog circuits. The booklet is split into 3 elements: half I, Scalable Analog Circuit layout describes in 6 papers problems with: scalable high-speed layout, scalable high-resolution mixed-mode ADC and OpAmp layout, scalable high-voltage layout for XDSL, scalability of wire-line entrance ends, reusable IP analog layout, and porting CAD analog layout. half II, High-Speed D/A Converters describes in 6 papers problems with: advent to high-speed D/A converter layout, retargetable 12-bit 200-MHz CMOS present steerage layout, high-speed CMOS D/A converters for upstream cable functions, static and dynamic functionality obstacles, the linearity problem of D/A converters for communications, and a 400-MHz, 10-bit charge-domain CMOS D/A converter for low-spurious frequency synthesis. half III, RF energy Amplifiers describes in 6 papers problems with: method points, evaluate and trade-offs, linear transmitter architectures, GaAs microwave SSPAs, Monolithic transformer-coupling in Si-bipolar, and RF energy amplifier layout in CMOS. "Analog Circuit layout" is an important reference resource for analog layout engineers and researchers wishing to maintain abreast with the newest advancements within the box. the educational assurance additionally makes it appropriate to be used in an enhance layout path.
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Additional resources for Analog Circuit Design: Scalable Analog Circuit Design
Minimizing the size of all these components means minimizing the epitaxial thickness and the out-diffusion of the buried layer during all thermal step s following the epitaxial growth. In the following two example of one to the other not mutually exclusive are reported Dielectric isolation is another technique often used. This technique often offers significant advantages over junction-isolated process for high-speed analog circuits. Trench lateral isolation of SOI bonded wafers drastically improves circuit density for thick epithaxy because the lateral diffusion of isolation diffusion is eliminated.
European Solid-State Circuits Conference, Southampton, 1997 9) “Successive Approximation Type Analog to Digital Converter with Repetitive Conversion Cycles” Dedic and Beckett, USP 5870052, Feb. 1999 10) “Method for Successive Approximation A/D Conversion” Cooper and Bacrania, USP 4620179, Oct. 1986 11) “Analog to Digital Conversion with Multiple Charge Balance Conversions” Cotter and Garavan, USP 5621409, Apr. 1997 12) “Charge Redistribution Analog to Digital Converter with Reduced Comparator Hysteresis Effects” Hester and Bright, USP 5675340, Oct.
The Supply Voltage Oxide Thickness Threshold Voltage and Matching parameter of these 14 processes are plotted on a log-log scale in Fig. 3. 0V In smaller technologies, scales roughly linear with minimum feature size (although it follows a 59 staircase function). Fig. 3 shows that both oxide thickness as well as matching scale down linearly with technology. Fig. 3 also shows threshold voltage clearly not scaling linearly, but more like a square-root function. The effect of that on voltage headroom is still not that strong as is still only 25% of This might change 60 below as preliminary estimates show of approximately 300mV.